An analytical breakdown model for short-channel MOSFET's

1 November 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (11) , 1735-1740
https://doi.org/10.1109/t-ed.1982.21018

Abstract

Avalanche-induced breakdown mechanisms for short-channel MOSFET's are discussed. A simple analytical model that combines the effects due to the ohmic drop caused by the substrate current and the positive feedback effect of the substrate lateral bipolar transistor is proposed. It is shown that two conditions must be satisfied before breakdown will occur. One is the emission of minority carriers into the substrate from the source junction, the other is sufficient avalanche multiplication to cause significant positive feedback. Analytical theory has been developed with the use of a published model for short-channel MOSFET's. The calculated breakdown characteristics agree well with experiments for a wide range of processing parameters and geometries.

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