High-resolution pressure sensors fabricated by silicon wafer direct bonding

6 June 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (12) , 1098-1100
https://doi.org/10.1049/el:19910682

Abstract

Silicon diaphragm pressure sensors have been fabricated on SOI structures to reduce the pressure sensitivity variation. The SOI structure, made by direct bonding two oxidised silicon wafers together, was used as an etch-stop layer during diaphragm formation and for controlling the diaphragm thickness. The pressure sensitivity variation can be controlled to within a standard deviation of ±2.3% from wafer to wafer.

Keywords

SI WAFER DIRECT BONDING
ETCH-STOP LAYER
DIAPHRAGM THICKNESS
OXIDISED WAFERS
PRESSURE SENSORS
SOI STRUCTURES
DIAPHRAGM FORMATION
PRESSURE SENSITIVITY VARIATION
HIGH-RESOLUTION TYPE

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