High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

Publisher Website

13 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 52-55
https://doi.org/10.1109/bipol.2001.957855

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
IEEE Transactions on Electron Devices, 1999