Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
- 20 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (21) , 3022-3024
- https://doi.org/10.1063/1.116684
Abstract
We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5×1013 cm−2), high Hall mobility (on the order of 800 cm2/Vs) and high sheet concentration‐mobility product (up to approximately 1016 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Ω mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to ≊8.8×10−5 Ω cm2 specific contact resistance.Keywords
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