Self-Consistent Calculations of the Energy Band Structure ofSi
- 15 June 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 158 (3) , 764-775
- https://doi.org/10.1103/physrev.158.764
Abstract
Self-consistent calculations of the band structure of the semiconducting compound Si are presented for the nonrelativistic Hartree and Hartree-Fock (HF) independent-particle models (IPM's). The IPM's are based on a finitely periodic model of the many-electron system. Some advantages and distinctions of this model with respect to the conventional formulation are discussed. The calculations are broken into two parts. First-order core (tight-binding) functions and energies are obtained from a model in which all valence effects are neglected. The dominant valence contributions are included in the final stage of calculation where the basis consists of first-order core functions and orthogonalized plane waves. Approximations to matrix elements are described and the error is estimated. The calculations reveal that the valence-band maximum occurs at and the conduction band is many-valleyed with minima at the equivalent points . These results agree with qualitative predictions of band symmetries based on experimental charge densities and a symmetry analysis using linear combinations of atomic orbitals. A preliminary investigation indicates that the Hartree bands are in good quantitative agreement with optical data and should be a valuable aid in the interpretation of experiment. The HF-IPM results for Si are compared with results for HF calculations in free atoms.
Keywords
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