Mobility measurements with a standard contact resistance pattern

1 April 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (4) , 162-164
https://doi.org/10.1109/EDL.1987.26588

Abstract

The standard test pattern used for planar-contact resistance measurements yields values for normalized contact resistance, contact resistivity, and semiconductor sheet resistance. Application of a perpendicular magnetic field yields additional data, including bulk semiconductor mobility and sheet carrier concentration, and also the mobility of the material under the contact. This new technique is applied to a GaAs implanted layer designed for metal-semiconductor field-effect transistor (MESFET) applications. One advantage of the method is that a separate Hall-effect measurement is no longer necessary.

Keywords

ELECTRICAL RESISTANCE MEASUREMENT
MEASUREMENT STANDARDS
CONTACT RESISTANCE
MAGNETIC FIELD MEASUREMENT
MAGNETIC MATERIALS
SEMICONDUCTOR DEVICE TESTING
CONDUCTIVITY
SEMICONDUCTOR MATERIALS
SHEET MATERIALS
GALLIUM ARSENIDE

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