A High Efficiency InGaP/GaAs HBT Power Amplifier MMIC for the 5GHz Wireless-LAN Application

1 October 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1-4
https://doi.org/10.1109/euma.2002.339324

Abstract

An InGaP/GaAs two-stage HBT linear power amplifier MMIC for the 5GHz Wireless-LAN Application was developed. By using a novel linearizer and a small-size via-hole technology, the power amplifier showed high output power (19dBm) with high power-added-efficiency (PAE : 18.5%), sufficient gain (21.0dB) and high linearity (4.78% error vector magnitude : EVM) at supply voltage 3.3V. It is the highest PAE in the power amplifier MMIC for the 5GHz Wireless-LAN application ever reported.

Keywords

GALLIUM ARSENIDE
HETEROJUNCTION BIPOLAR TRANSISTORS
HIGH POWER AMPLIFIERS
MMICS
POWER AMPLIFIERS
POWER GENERATION
RESISTORS
ENERGY CONSUMPTION
CIRCUITS
CMOS TECHNOLOGY

This publication has 1 reference indexed in Scilit:

A miniature 44% efficiency GaAs HBT power amplifier MMIC for the W-CDMA application
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002