Oxide Micro‐Precipitates in As‐Grown CZ Silicon

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Abstract
Micro‐precipitate density, size, and distribution in as‐grown Czochralski grown silicon crystals are determined using the selective growth model. In the model, as‐grown precipitates larger than a critical radius at the annealing temperature are assumed to be stable and grow during the annealing. It is found that there are highly dense micro‐precipitates, for example, 1010/cm3 at several angstroms radius, in the as‐grown crystals. Micro‐precipitate formation in cooling during growth is discussed in terms of homogeneous nucleation model and diffusion‐limited growth of precipitates.

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