Optical properties of a 1.3-µm InGaAsP superluminescent diode

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (4) , 360-363
https://doi.org/10.1109/T-ED.1983.21130

Abstract

The optical properties of a 1.3-µm InGaAsP-InP buried heterostructure (BH) superluminescent diode (SLD) are described. The spectra of this device exhibit a large number of longitudinal modes. The light output at constant current from an SLD has a strong temperature dependence in the superluminescent region (high currents) and week temperature dependence in the spontaneous region (low currents). This severe temperature dependence will limit the systems application of this type of device unless thermoelectric cooling is used. The coupling efficiency (butt-coupling) into a 0.23-NA 50-µm-diameter graded index fiber is 26 percent. A model of the SLD including a temperature dependent nonradiative mechanism (same as in 1.3-µm InGaAsP lasers) suggests that the strong temperature dependence in the superluminescent region is a fundamental property of the device.

Keywords

FIBER LASERS