Infrared spectrum and surface reaction of NO adsorbed on Si films
- 1 January 1979
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases
- Vol. 75, 1788-1797
- https://doi.org/10.1039/f19797501788
Abstract
Adsorption of NO at 77 K on silicon films was studied by means of infrared spectroscopy, and the results were compared to previous investigations on germanium films. The Si films were prepared in a low temperature i.r. Dewar cell under u.h.v. conditions. Absorption bands obtained at 2223 and 1276 cm–1 were assigned to N2O molecules formed on the surface of the adsorbent as a result of the reaction: 2NOads+ text-decoration:overlinee+⊕(V)→ N2Oads+ O– chem+⊕(V). A band at 1020 cm–1 was assigned to the oxidized Si surface. Bands at 1859 and 1762 cm–1 were assigned to NO dimers formed on a clean Si surface, which disappeared on heating the film slightly while the absorption bands assigned to the N2O molecules grew in intensity. Absorptions at 1861 and 1765 cm–1 were assigned to NO dimers adsorbed on the oxidized Si films after desorption of the N2O species. The overall surface reaction on Si was compared to that on Ge and a possible explanation of the results is discussed.Keywords
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