Far-Infrared Emission from Population-Inverted Hot-Carrier System in-Ge
- 25 January 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (4) , 271-274
- https://doi.org/10.1103/physrevlett.48.271
Abstract
Experimental evidence is presented for radiative transitions of light holes accumulated in a limited area in momentum space to the heavy-hole band. Also reported is the observation of cyclotron resonance emission from the accumulated light holes. The possibility of far-infrared amplification is discussed.Keywords
This publication has 14 references indexed in Scilit:
- A capacitive method for hall effect measurementsApplied Physics A, 1981
- Hot-carrier population inversion inPhysical Review B, 1981
- Streaming motion and population inversion of hot electrons in silver halides at crossed electric and magnetic fieldsPhysical Review B, 1979
- Definite Evidence for Population Inversion of Hot Electrons in Silver HalidesPhysical Review Letters, 1979
- Speed limitation of Ge far-infrared photoconductive detectorsInfrared Physics, 1978
- Optimization of a tunable far-infrared InSb sourceInfrared Physics, 1976
- Monte Carlo Calculation of Hot Electron Phenomena. I. Streaming in the Absence of a Magnetic FieldJournal of the Physics Society Japan, 1971
- Far-Infrared Recombination Emission in-Ge and-InSbPhysical Review B, 1970
- Far-Infrared Recombination Radiation from Impact-Ionized Shallow Donors in GaAsPhysical Review Letters, 1969
- A high-detectivity gallium-doped germanium detector for the 40–120μ regionInfrared Physics, 1965