Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °C
- 1 July 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (1) , 41-43
- https://doi.org/10.1063/1.88260
Abstract
A pyrolytic Si3N4 encapsulation technique has been used to permit reproducible annealing of implanted GaAs at temperatures as high as 950 °C. At low doses, electrical activity ≳70% has been achieved for both Si and Se. At high doses, sheet carrier concentrations and sheet resistivities of 1.8×1014/cm2 and 20 Ω/⧠, respectively, for Si and 7×1013/cm2 and 44 Ω/⧠, respectively, for Se have been measured.Keywords
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