Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 850-852
- https://doi.org/10.1116/1.586133
Abstract
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