Dependence of the electrical characteristics of heavily Ge-doped GaAs on molecular beam epitaxy growth parameters
- 15 July 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2) , 165-167
- https://doi.org/10.1063/1.91810
Abstract
Ge incorporation into molecular beam epitaxial GaAs as a function of substrate temperature (350–620 °C), Ge flux (109–1014 cm−2 sec−1) and of As4/Ga flux ratio (10/1) has been studied. The free‐electron (7.4×1019 cm−3) and free‐hole (3.0×1020 cm−3) concentrations in GaAs were the highest obtained to date. Tentative incorportion mechanisms for Ge in GaAs are also presented.Keywords
This publication has 5 references indexed in Scilit:
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971
- Ionization Interaction between Impurities in Semiconductors and InsulatorsPhysical Review B, 1956