A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHz
- 30 June 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (6) , 719-741
- https://doi.org/10.1016/0038-1101(73)90115-9
Abstract
No abstract availableKeywords
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