Characterization of EL2 in Annealed LT-GaAs

• 1 October 1993
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 143-147, 1599-1604
• https://doi.org/10.4028/www.scientific.net/msf.143-147.1599

Abstract

Keywords

• EL2 DEFECT
• LOW TEMPERATURE GROWN GAAS
• PHOTOCURRENT
• PHOTOQUENCHING