Optimized 60-V Lateral Dmos Devices for Vlsi Power Applications
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Comparison of lateral and vertical DMOS specific on-resistancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985