Short-channel MOSFET VT-VDScharacteristics model based on a point charge and its mirror images
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (2) , 211-216
- https://doi.org/10.1109/t-ed.1982.20686
Abstract
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