λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists
- 22 November 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (24) , 1008-1010
- https://doi.org/10.1049/el:19840686
Abstract
λ/4-shifted InGaAsP/InP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and single-wavelength operation above it at the Bragg wavelength were observed.Keywords
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