Observations of Al2O3 and free silicon at the interface between aluminum films and SiO2
- 1 July 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 52 (2) , 203-214
- https://doi.org/10.1016/0040-6090(78)90139-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Oxide thickness measurements up to 120 Å on silicon and aluminum using the chemically shifted auger spectraSurface Science, 1977
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Electron attenuation lengths for free‐electron‐like metalsJournal of Vacuum Science and Technology, 1976
- Abstract: AES characterization of oxidized films of Mg, Al, and SiJournal of Vacuum Science and Technology, 1976
- The probing depth in photoemission and auger-electron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Range of Heavy Ions in SolidsPhysical Review B, 1962