The Absolute Coverage of K on the Si(111)-3×1-K Surface
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9A) , L1263-1265
- https://doi.org/10.1143/jjap.32.l1263
Abstract
The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420°C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.Keywords
This publication has 22 references indexed in Scilit:
- Structural and electronic properties of ordered single and multiple layers of Na on the Si(111) surfacePhysical Review Letters, 1992
- Scanning Tunneling Microscope Study of the Structural Transformation of the Si(111)7×7 Surface to the Na-Induced 3×1 SurfaceJapanese Journal of Applied Physics, 1992
- Structure analysis of the Si(111)√3 × √3R30°-Ag surfacePhysical Review Letters, 1991
- Adsorption of Li (K) on the Si(001)-(2×1) surface: Scanning-tunneling-microscopy studyPhysical Review B, 1990
- Field ion-scanning tunneling microscopyProgress in Surface Science, 1990
- New versatile room-temperature field ion scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Scanning tunneling microscope equipped with a field ion microscopeJournal of Vacuum Science & Technology A, 1989
- Photoelectron diffraction study of Si(001) 2 × 1-K surface: Existence of a potassium double layerPhysical Review B, 1988
- Angle-resolved photoelectron-spectroscopy study of the Si(001)2×1-K surfacePhysical Review B, 1987
- Measurement of Overlayer-Plasmon Dispersion in K Chains Adsorbed on Si(001)2×1Physical Review Letters, 1984