The Influence of Substrate Surface Chemistry on GaAs - on - Si Growth
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 MonolayerMRS Proceedings, 1987
- Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystalsPhysical Review B, 1986
- Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayersApplied Physics Letters, 1986