Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping technique
- 27 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4) , 253-255
- https://doi.org/10.1063/1.98464
Abstract
A heated film of hydrogenated amorphous silicon was doped with phosphorus and hydrogen by a 6.0-kV diffused and accelerated beam of ions from rf discharge in a magnetic field, which produced a plasma from phosphine gas containing hydrogen. This doping technique achieved a dark conductivity of 8.7×10−4 (Ω cm−1) at room temperature. The conductivity activation energy was 0.17 eV.Keywords
This publication has 6 references indexed in Scilit:
- Hydrogenation for PolySilicon MOSFET's by ion shower doping techniqueIEEE Electron Device Letters, 1986
- Ion implanted contacts to a-Si:H thin-film transistorsIEEE Electron Device Letters, 1986
- Local structure study of tetrahedrally-boned amorphous semiconductors by NMR, ESR and Raman spectroscopiesJournal of Non-Crystalline Solids, 1983
- Implantation damage in amorphous siliconPhilosophical Magazine Part B, 1981
- The effects of ion implantation on the electrical properties of amorphous siliconPhilosophical Magazine Part B, 1980
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976