Model for Oxide Wearout Due to Charge Trapping

1 April 1983

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium

No. 07350791,p. 242-247
https://doi.org/10.1109/irps.1983.361990

Abstract

Scaling of MOS gate oxides below 200Å can result in wearout of intrinsic oxides. This paper presents studies of thin gate oxides which show that the time dependent nature of oxide breakdown is due to charge trapping induced by leakage current. Failure occurs when the trapped charge increases the internal electric field in the oxide to a critical value of 11.2 MV/cm needed for avalanche breakdown. By measuring trapping parameters such as trap centroids and generation/recombination rates versus stress fields, a mathematical model for time dependent oxide wearout has been developed.

Keywords

LEAKAGE CURRENT
ELECTRON TRAPS
ELECTRIC BREAKDOWN
MANUFACTURING
PREDICTIVE MODELS
BREAKDOWN VOLTAGE
TUNNELING
AVALANCHE BREAKDOWN
STRESS MEASUREMENT
TIME MEASUREMENT

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