Ferromagnetism in magnetically doped III-V semiconductors

Preprint

25 January 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0101389

Abstract

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity level in the bandgap to the valence band can explain ferromagnetism in GaAs(Mn) no matter samples are degenerated or not. Formation of ferromagnetic clusters and percolation picture of phase transition describes well all available experimental data and allows to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,Al)N epitaxial layers.

Keywords

MAGNETICALLY DOPED
PHASE TRANSITION
SEMIMAGNETIC III
FERROMAGNETISM
TEMPERATURE
TRANSITION
DOPED III
GAAS

All Related Versions

Version 1, 2001-01-25, ArXiv
Published version: Physical Review Letters, 86 (24), 5593.

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