Preparation of c-Axis-Oriented PbTiO3 Thin Films by MOCVD under Reduced Pressure
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6R) , 1030-1034
- https://doi.org/10.1143/jjap.28.1030
Abstract
Ferroelectric PbTiO3 thin films were prepared by a simultaneous deposition of TiO2 and PbO on heated substrates under the reduced pressure of 6 Torr. Titanium tetraisopropoxide and tetraethyl lead were used as source materials. The deposition behaviors of TiO2 and PbO were examined independently. Homogeneous nucleations of the reaction species in the vapor phase were depressed under the reduced pressure. The films obtained at 500° to 650°C of consisted of PbTiO3 of the single perovskite phase, and highly c-axis oriented and epitaxal films were grown on MgO(100). The deposition rate of the film available by adjusting the source temperature and the flow rate of the carrier gas is 50 to 1000Å/min, the maximum value of which is ten or more times that obtained by the conventional sputtering method.Keywords
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