Mutual doping effects between epitaxial ZnS films and GaAs substrates
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (9) , 514-516
- https://doi.org/10.1063/1.88228
Abstract
The problem of strong self‐activated luminescence in undoped ZnS films grown on GaAs substrates by chemical vapor deposition is analyzed. Tests made by changing substrates in conjunction with photoluminescence and optical transmission measurements are described. It is concluded that mutual doping effects take place between the ZnS film and the GaAs substrate with Ga doping the ZnS films while Zn dopes the GaAs substrate.Keywords
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