The Origin of Slow States at the Interface of a-Si:H and Silicon Nitride
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Transient photoconductivity is used to investigate the origin of slow states near the interface of a-Si:H and silicon nitride. A graded composition of the nitride layer near the interface greatly increases the density of slow states. We deduce that slow states are bulk nitride traps and that the magnitude of charge storage is largely determined by the composition dependence of the localization radius of electrons within these traps. The kinetics of charge storage and release are found to be very different and are interpreted in terms of an activation step at the interface.Keywords
This publication has 5 references indexed in Scilit:
- Transient Photoconductivity Studies of a-Si:H InterfacesMRS Proceedings, 1985
- Electronic states at the hydrogenated amorphous silicon/silcon nitride interfaceApplied Physics Letters, 1984
- Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor HeterojunctionsPhysical Review Letters, 1984
- Deep-level distributions in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1983
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983