Si(111)/FeSi2 heterostructures: Formation and properties of the low temperature metallic (γ) and semiconducting (β) disilicide phases
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 1704-1709
- https://doi.org/10.1116/1.586226