Enhanced outdiffusion in ion implanted silicon
- 6 April 1970
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 31 (7) , 387-388
- https://doi.org/10.1016/0375-9601(70)91000-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A gas-release study of the annealing of bombardment-induced disorder∗ (studies on bombardment-induced disorder—I)Journal of Physics and Chemistry of Solids, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- The application of diffusion theory to inert-gas motion in ion-bombarded solids: Diffusion theory for discrete media, part IIIJournal of Nuclear Materials, 1966