InP:Fe photoconductors as photodetectors
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (4) , 412-415
- https://doi.org/10.1109/t-ed.1983.21138
Abstract
Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are Observed.Keywords
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