Characterization of Cu2ZnSnS4 Thin Films Prepared by Photo-Chemical Deposition
- 1 January 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (1S)
- https://doi.org/10.1143/jjap.44.715
Abstract
Cu2ZnSnS4 thin films were prepared by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. The compositional ratio of the films was dependent little on pH of aqueous solution and the surface of the samples became smooth by use of aqueous filter. A sample annealed at 400°C was a p-type semiconductor and showed photoconductivity. This is the first observation of photo-conductivity from semiconductor films deposited by PCD, to the best of our knowledge.Keywords
This publication has 5 references indexed in Scilit:
- Deposition of ZnS thin films by photochemical deposition techniqueMaterials Letters, 2003
- Synthesis of PbS in aqueous solutions by photochemical reactionsMaterials Science and Engineering: B, 2002
- Photochemical deposition of ZnSe polycrystalline thin films and their characterizationThin Solid Films, 2002
- Photochemical deposition of Se and CdSe films from aqueous solutionsThin Solid Films, 2001
- A New Technique of Compound Semiconductor Deposition from an Aqueous Solution by Photochemical ReactionsJapanese Journal of Applied Physics, 1997