The neutralization of Na+ ions in HCl grown SiO2
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 841-843
- https://doi.org/10.1051/rphysap:019780013012084100
Abstract
The kinetic behaviour of Na+ ions in (HCl) MOS capacitors has been studied by the method of thermally stimulated ionic currents (TSIC). Both charged and neutral trap states at the Si-SiO2 interface were identified. The dependence of the ion neutralization process on oxide chlorine content, and on the time and temperature of positive bias stress was investigatedKeywords
This publication has 2 references indexed in Scilit:
- Sodium passivation in HCl oxide films on SiApplied Physics Letters, 1977
- Thermally stimulated ionic conductivity of sodium in thermal SiO2Journal of Applied Physics, 1975