Damage Caused by Stored Charge during ECR Plasma Etching

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Abstract
The influence of stored charge caused by changing the plasma parameter can be accurately shown by measuring the leakage current in CMOS-inverter integrated circuits. The leakage current increase is due to nonuniform ion current density distribution and self-bias voltage at the point of ECR plasma discharge turn-off. Positive charge ions are stored by the ion current density difference on a wafer. Moreover, a large voltage across the gate oxide is generated by the self-bias voltage at the point of ECR plasma discharge turn-off, and finally degrades the gate oxide.

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