CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes
- 26 September 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 38 (20) , 1202-1204
- https://doi.org/10.1049/el:20020832
Abstract
Planar, interdigitated pin photodiodes with varying implanted electrode depths have been fabricated on 2 µm-thick silicon-on-insulator substrates using a conventional CMOS platform technology. The bandwidth at 850 nm wavelength was found to achieve an optimum of 4 GHz with an electrode depth of 1 µm.Keywords
This publication has 5 references indexed in Scilit:
- Design and implementation of high-speed planar Si photodiodes fabricated on SOI substratesIEEE Journal of Quantum Electronics, 1999
- 1 Gbit/s CMOS photoreceiver with integrated detectoroperating at 850 nmElectronics Letters, 1998
- High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structureApplied Physics Letters, 1996
- 140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layerApplied Physics Letters, 1994
- Two-channel 5 Gbit/s silicon bipolar monolithicreceiver for parallel optical interconnectsElectronics Letters, 1994