Electron Transport in GaAs

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Abstract
The electron drift mobility in GaAs has been calculated and extensively compared to experimental data. Good agreement is obtained for a wide range of temperature and ionized-impurity concentrations. Calculated results for the electron contribution to thermoelectric power are also presented and compared to the small amount of existing data. Ionized-impurity scattering, deformation-potential scattering, piezoelectric scattering, and polar scattering are included for a nonparabolic conduction band with electron-wave-function admixture. Furthermore, degeneracy has been incorporated without approximation. The formulation of electron scattering by ionized impurities is shown to fail at sufficiently low temperatures because of the loss of binary-scattering events. This feature probably obscures the expected failure of the Born approximation, given the purity of even the best present-day semiconductors.

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