Effect of matrix on InAs self-organized quantum dots on InP substrate
- 19 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (3) , 362-364
- https://doi.org/10.1063/1.120737
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasingSolid-State Electronics, 1996
- Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum DotsMRS Bulletin, 1996
- InAs self-assembled quantum dots on InP by molecular beam epitaxyApplied Physics Letters, 1996
- Structural aspects of the growth of InAs islands on InP substrateSolid-State Electronics, 1996
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995
- Optical properties of InAs quantum wells emitting between 0.9 mu m and 2.5 mu mSemiconductor Science and Technology, 1993
- Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layerJournal of Applied Physics, 1991
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982