Low threshold 1.55 μm InGaAsP lasers double clad with InGaAsP confining layers
- 10 December 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (25-26) , 952-954
- https://doi.org/10.1049/el:19810666
Abstract
Preliminary results for 1.55 μm InGaAsP double-heterostructure lasers with symmetrical InGaAsP confining layers are presented. The lowest broad-area threshold is 1.36 kA/cm2, which is 30% lower than the best value previously reported for 1.55 μm lasers. This improvement is believed to be related to the absence of terracing on InGaAsP confining layers.Keywords
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