Zinc Tungstate Crystal Growth, Dislocations, and Crystallography

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Abstract
Single crystals of zinc tungstate were grown by the Čzochralski method from melts prepared by various methods. Of the three chemical etches evaluated for purposes of revealing dislocations in this material, solutions of potassium or sodium hydroxides were most satisfactory. The (100) and (010) planes were shown to be slip planes. Both of these planes are parallel to the growth direction of crystals grown for maser applications. Annealing experiments indicated appreciable mobility of the dislocations at about 800°C. Etch pit counts revealed typical dislocation densities of 104−105 pits/cm2 in areas near the center, and around 106 pits/cm2 at outer regions of the crystal. Gaseous inclusions were frequently surrounded in their immediate vicinity by dislocations, and regions with a high density of these inclusions also had a high dislocation density. Some miscellaneous crystallographic information is also presented to enable crystals to be accurately orientated by simple optical methods.

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