Low threshold current lateral injection lasers on semi-insulating substrates fabricated using Si impurity-induced disordering
- 18 July 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (15) , 1372-1374
- https://doi.org/10.1049/el:19910863
Abstract
The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low as 2.77 mA and a single facet external quantum efficiency as high as 30%.Keywords
This publication has 1 reference indexed in Scilit:
- Submilliampere-threshold multi-quantum-well AlGaAs lasers without facet coatingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990