Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling
- 15 April 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (12) , 8313-8317
- https://doi.org/10.1103/physrevb.41.8313
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Defect Analysis in SiO2/Si Structures by Electron TunnelingMaterials Science Forum, 1989
- Oxygen vacancy and thecenter in crystallinePhysical Review B, 1987
- center in glassy Si:,, and "very weak"superhyperfine structurePhysical Review B, 1980
- Hole traps in silicon dioxideJournal of Applied Physics, 1976
- Electronic structure ofcenters in SiPhysical Review B, 1975
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- Electron Spin Resonance in Neutron-Irradiated QuartzJournal of Applied Physics, 1961
- Trapped Electrons in Irradiated Quartz and Silica: II, Electron Spin ResonanceJournal of the American Ceramic Society, 1960
- Trapped Electrons in Irradiated Quartz and Silica: I, Optical AbsorptionJournal of the American Ceramic Society, 1960