Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy

22 April 1987

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 231-238
https://doi.org/10.1117/12.940919

Abstract

Infrared reflectance spectroscopy, in the range of 4000 to 250 cm^-1, has been used to non-destructively characterize the carrier concentration and thickness of n-type epitaxial GaN and AlGai_xAs and S-doped bulk InP. Measurements of carrier concentration and thickness uncertain to 2-4% and 2 % are typical and relative differences of 2 and 1% respectively can be observed from different areas of the sample. This reflectance tool is sensitive to carrier concentrations above about 1 x 10¹⁷cm-for the semicondu9tors studied here and is estimated to be sensitive to concentrations in the low 10 cm range for the heavier III-V's, e.g., GaSb and InSb. A by-product of these measurements has been the improvement of an organometallic vapor phase epitaxy system with minimal interruption to the growth program because of the quick turn-around time of this technique.

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