C-induced deep levels in crystalline Si

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Abstract
A study of deep traps in the depletion regions of Schottky barrier junctions on silicon was made using deep level transient spectroscopy (DLTS). The Si samples, which had different carbon contents (C), were exposed to several annealing processes. The measurements show that depending on the C concentration and the annealing process employed C-induced deep traps with activation energies of 355, 290, and 216 meV appear above the valence band. The density, the trap levels, and the capture cross sections of these C-induced traps were determined from the DLTS data. The deep trap densities are correlated with the behavior of the diffusion length of the minority carriers in the different Si materials.