Internal optical losses in very thin CW heterojunction laser diodes
- 1 July 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 11 (7) , 402-408
- https://doi.org/10.1109/jqe.1975.1068646
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Radiation fields of GaAs-(AlGa)As injection lasersIEEE Journal of Quantum Electronics, 1974
- Beam divergence of the emission from double-heterostructure injection lasersJournal of Applied Physics, 1973
- Measurements of refractive index step and of carrier confinement at (AlGa)As–GaAs heterojunctionsJournal of Applied Physics, 1973
- High peak power from (GaAl)As–GaAs double-heterostructure injection lasersApplied Physics Letters, 1973
- Thermal conductivity of Ga1−xAlxAs alloysJournal of Applied Physics, 1973
- (GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinementIEEE Journal of Quantum Electronics, 1973
- Theory of Transverse Cavity Mode Selection in Homojunction and Heterojunction Semiconductor Diode LasersJournal of Applied Physics, 1971
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962