Monolithic p-i-n GaAlAs multiple quantum well photorefractive device

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Abstract
In this letter, we report a monolithic p-i-n multiple quantum-well (MQW) GaAlAs photorefractive device operating in reflection mode. The device structure consists of a photorefractive structure grown with low temperature grown GaAlAs charge blocking layers on top of a 20 period n-type GaAlAs/AlAs quarter wave stack mirror. The device operates by double passing mutually coherent beams through the photorefractive structure exhibiting nearly 0.23% input diffraction efficiency. Because of fast sweep time in ultranarrow-barrier MQWs used here, the writing energy density of approximately 20 nJ/cm2 is a nearly seven (7) improvement over previously reported devices using 100 Å GaAlAs barriers.