Rate of Crystal Growth in Drawn Tungsten Wires as a Function of Temperature
- 1 October 1942
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 13 (10) , 647-651
- https://doi.org/10.1063/1.1714814
Abstract
Large single crystals can be grown in ``218'' and similar tungsten wires by vacuum heating at a constant temperature in the range 1900°K to 2200°K. The growth can be followed by observation of the thermionic emission pattern, using a cylindrical electron‐projection tube with a fluorescent screen. The rate of growth is found to increase with temperature according to an exponential law. Crystal growth is slower in wires drawn to smaller diameter; this can be explained by the small grain hypothesis. The perfection of crystals is discussed.This publication has 3 references indexed in Scilit:
- The Thermionic Constants of Tungsten as a Function of Crystallographic DirectionPhysical Review B, 1940
- An Engine for Smoothing Small Tungsten WiresReview of Scientific Instruments, 1938
- An Electron Microscope for Filaments: Emission and Adsorption by Tungsten Single CrystalsPhysical Review B, 1936