Deep traps in high resistivity AlGaN films
- 6 May 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (5) , 831-838
- https://doi.org/10.1016/s0038-1101(98)00089-6
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- 75 Å GaN channel modulation doped field effect transistorsApplied Physics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- AlGaN ultraviolet photoconductors grown on sapphireApplied Physics Letters, 1996
- Sheath Potential in the Accelerating Region of an Electron-Beam-Excited Plasma ApparatusJapanese Journal of Applied Physics, 1996
- Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistorsApplied Physics Letters, 1996
- High transconductance-normally-off GaN MODFETsElectronics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Microwave performance of GaN MESFETsElectronics Letters, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992