Charge Collection in Multilayer Structures
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1149-1154
- https://doi.org/10.1109/tns.1984.4333473
Abstract
Charge collection measurements using energetic ions have been performed on layered structures in bulk and epitaxial silicon. Both fast transient digitizer and slower charge sensitive preamplifier measurements have been made as a function of bias, ion type, energy, and angle of incidence. The existence of pulses of both polarities on a node after passage of a charged particle has been seen in certain Cases.Keywords
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