Charge buildup at high dose and low fields in SIMOX buried oxides

• 1 December 1991
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
• Vol. 38  (6) , 1234-1239
• https://doi.org/10.1109/23.124098

Abstract

Keywords

• ELECTRON BEAM EFFECTS
• ELECTRON-HOLE RECOMBINATION
• HOLE TRAPS
• ION IMPLANTATION
• METAL-INSULATOR-SEMICONDUCTOR DEVICES
• SEMICONDUCTOR-INSULATOR BOUNDARIES
• SPACE CHARGE
• BOX MOS CAPACITORS
• SIMOX BURIED OXIDES
• SOI TECHNOLOGY
• SI-SIO2
• SI:O
• ELECTRON IRRADIATION
• HIGH DOSE
• LOW-FIELD REGIONS
• SPACE-CHARGE-DRIVEN MODIFICATION
• TRAPPED CHARGE BUILDUP
• TRAPPED HOLE ELECTRON RECOMBINATION