Electron spectroscopic investigation of the semiconductor-metal transition in
- 15 June 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (23) , 15397-15403
- https://doi.org/10.1103/physrevb.47.15397
Abstract
We study the electronic structure of , x=0, 0.1, 0.2, 0.3, and 0.4, across the semiconductor-metal transition, using various electron spectroscopy techniques. The negligible intensity seen at using ultraviolet photoemission spectroscopy and bremsstrahlung isochromat spectroscopy (BIS) indicate an unusual semiconductor-metal transition observed for x≥0.2, consistent with the resistivity data. The BIS spectra show doped hole states developing about 1.4 eV above as a function of x. Auger electron spectroscopy gives an estimate of the intra-atomic Coulomb energy in the O 2p manifold to be about 6.8 eV. The Mn 2p core-level spectrum of , analyzed in terms of a configuration-interaction calculation, gives parameter values of the charge-transfer energy Δ=5.0 eV, the hybridization strength between Mn 3d and O 2p states, t=3.8 eV, and the on-site Coulomb energy in Mn 3d states =4.0 eV, suggesting a mixed character for the ground state of .
Keywords
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